Datasheet Texas Instruments CSD17555Q5A — Даташит

CSD17555Q5A
www.ti.com SLPS353 – JUNE 2012 30V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17555Q5A PRODUCT SUMMARY FEATURES 1 2 TA = 25В°C unless otherwise stated Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package 30 V Qg Gate Charge Total (4.5V) 23 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage DESCRIPTION
The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications. 8 D VGS = 10V 2.3 mΩ 1.5 V Package Media Qty Ship CSD17555Q5A SON 5-mm × 6-mm
Plastic Package 13-Inch
Reel 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage В±20 V Continuous Drain Current (Package limited),
TC = 25В°C 100 Continuous Drain Current (Silicon limited),
TC = 25В°C 116 ID A Continuous Drain Current(1) 24 IDM Pulsed Drain Current, TA = 25В°C(2) 153 A PD Power Dissipation(1) 3 W A 2 7 D TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C S 3 6 D EAS Avalanche Energy, single pulse
ID = 60A, L = 0.1mH, RG = 25Ω 180 mJ G 4 5 D (1) Typical RθJA = 42°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2% P0093-01 SPACE
RDS(on) vs VGS SPACE
GATE CHARGE …