DISCRETE SEMICONDUCTORS DATA SHEET
book, halfpage M3D088 BF862
N-channel junction FET
Product specification
Supersedes data of 1999 Jun 29 2000 Jan 05 NXP Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 High transition frequency for excellent sensitivity in
AM car radios PIN High transfer admittance.
APPLICATIONS DESCRIPTION 1 source 2 drain 3 gate Pre-amplifiers in AM car radios.
handbook, halfpage
2 1 DESCRIPTION
Silicon N-channel symmetrical junction field-effect
transistor in a SOT23 package. Drain and source are
interchangeable. d g s 3
Top view MAM036 Marking code: 2Ap. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage 20 V VGSoff gate-source cut-off voltage 0.3 0.8 1.2 V IDSS drain-source current 10 25 mA Ptot total power dissipation 300 mW yfs transfer admittance 35 45 mS Tj junction temperature 150 C Ts 90 C CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. 2000 Jan 05 2 NXP Semiconductors Product specification N-channel junction FET BF862 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 20 V VDG drain-gate voltage 20 V VGS gate-source voltage 20 V IDS drain-source current 40 mA IG forward gate current 10 mA Ptot total power dissipation 300 mW Tstg storage temperature 65 +150 C Tj junction temperature 150 C Ts 90 C; note 1 Note
1. Main heat transfer is via the gate lead.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering
point Note …
