AOD508/AOI508
30V N-Channel AlphaMOS General Description Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 70A < 3m < 4.5m Application DC/DC Converters in Computing Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested TO252 DPAK TopView Bottom View Top View TO-251A IPAK Bottom View D D D D G S D S G G D S S D G G S Absolute Maximum Ratings TA=25° unless otherwise noted C Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A
C Maximum 30 ±20 70 55 159 22 18 37 68 36 50 25 2.5 1.6 -55 to 175 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25° C TC=100° C TA=25° C TA=70° C A A mJ V W W ° C Avalanche energy L=0.1mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol
t 10s Steady-State Steady-State RJA RJC Typ 16 41 2.1 Max 20 50 3 Units ° C/W ° C/W ° C/W Rev 1: April 2012 www.aosmd.com Page 1 of 6 AOD508/AOI508 Electrical Characteristics (TJ=25° unless otherwise noted) C Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGSID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.2 1.8 2.4 3.5 3.3 105 0.7 1 58 2010 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.9 898 124 1.8 36 VGS=10V, VDS=15V, ID=20A 17 6 8 7.5 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=500A/µs 4.0 37.0 7.5 14 20.3 2.7 49 23 Min 30 1 5 100 2.2 3 4.4 4.5 Typ Max Units V µA nA V m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Re …
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