Datasheet Vishay SI4401BDY-T1-GE3 — Даташит

Si4401BDY
Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
VDS (V)
-40 RDS(on) (О©) ID (A) 0.014 at VGS = -10 V -10.5 0.021 at VGS = -4.5 V -8.7 Qg (Typ.)
40 Halogen-free According to IEC 61249-2-21
Definition TrenchFETВ® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8
S 1 8 D S 2 7 D S 3 6 D G 4 5 D S G Top View
D Ordering Information: Si4401BDY-T1-E3 (Lead (Pb)-free)
Si4401BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 В°C, unless otherwise noted
Parameter Symbol 10 s Steady State Drain-Source Voltage VDS -40 Gate-Source Voltage VGS В± 20 Continuous Drain Current (TJ = 150 В°C)a TA = 25 В°C
TA = 70 В°C Continuous Source Current (Diode Conduction)a
Single Pulse Avalanche Energy
Maximum Power Dissipationa IS
L = 1 mH
TA = 25 В°C
TA = 70 В°C -8.7 -8.3 -5.9
-50
-1.36
30 EAS 45 mJ 2.9 1.5 1.85 0.95 TJ, Tstg Operating Junction and Storage Temperature Range A -2.6 IAS PD V -10.5 IDM Pulsed Drain Current Avalanche Current ID Unit -55 to 150 W
В°C THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Symbol …