Datasheet Vishay SI4401DY-T1-E3 — Даташит

Si4401DY
Vishay Siliconix P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
-40 RDS(on) (О©) ID (A) 0.0155 at VGS = -10 V -10.5 0.0225 at VGS = -4.5 V -8.7 FEATURES Halogen-free According to IEC 61249-2-21
Definition TrenchFETВ® Power MOSFETs S SO-8
S
S
S
G 8 D 2 7 D 3 6 D 4 5 D 1 G Top View D Ordering Information: Si4401DY-T1-E3 (Lead (Pb)-free)
Si4401DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 В°C, unless otherwise noted
Parameter Symbol 10 s Steady State Drain-Source Voltage VDS -40 Gate-Source Voltage VGS В± 20 Continuous Drain Current (TJ = 150 В°C)a TA = 25 В°C
TA = 70 В°C Continuous Source Current (Diode Conduction)a IS
TA = 25 В°C
TA = 70 В°C PD -8.7 -8.3 -5.9
-50 -2.7 A -1.36 3.0 1.5 1.9 0.95 TJ, Tstg Operating Junction and Storage Temperature Range V -10.5 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit -55 to 150 W
В°C THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Symbol
t ≤ 10 s
Steady State
Steady State RthJA …