Datasheet ТI SN74AUP1G00DCKR — Даташит

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SCES604J – SEPTEMBER 2004 – REVISED DECEMBER 2016 SN74AUP1G00 Low-Power Single 2-Input Positive-NAND Gate
1 Features 2 Applications 1 ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
Available in the Ultra Small 0.64 mm2 Package
(DPW) with 0.5-mm Pitch
Low Static-Power Consumption
(ICC = 0.9 ВµA Max)
Low Dynamic-Power Consumption
(Cpd = 4 pF Typical at 3.3 V)
Low Input Capacitance (Ci = 1.5 pF Typical)
Low Noise Overshoot and Undershoot …