Datasheet Texas Instruments CSD17527Q5A — Даташит

CSD17527Q5A
SLPS331A – JUNE 2011 – REVISED AUGUST 2011 www.ti.com 30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17527Q5A PRODUCT SUMMARY FEATURES 1 2 Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package VDS Drain to Source Voltage 30 V Qg Gate Charge Total (4.5V) 2.8 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
Optimized for Control FET Applications mΩ VGS = 10V 9.3 mΩ 1.6 Device Package Media CSD17527Q5A SON 5-mm × 6-mm
Plastic Package 13-Inch
Reel V The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications. Qty Ship 2500 Tape and
Reel Text Added For Spacing
ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated DESCRIPTION VALUE UNIT VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage В±20 V Continuous Drain Current, TC = 25В°C 65 A Continuous Drain Current(1) 13 A IDM Pulsed Drain Current, TA = 25В°C(2) 85 A 3 W ID Top View
S 1 8 D PD Power Dissipation(1) 7 D Operating Junction and Storage
Temperature Range В°C 2 TJ,
TSTG –55 to 150 S EAS mJ 3 6 D Avalanche Energy, single pulse
ID = 30A, L = 0.1mH, RG = 25Ω 45 S (1) Typical RθJA = 44°C/W on 1-inch2 (6.45-cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4
PCB. …