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Datasheet Texas Instruments UC1708L883B — Даташит

ПроизводительTexas Instruments
СерияUC1708
МодельUC1708L883B
Datasheet Texas Instruments UC1708L883B

Неинвертирующие высокоскоростные силовые драйверы 20-LCCC от -55 до 125

Datasheets

Dual Non-Inverting Power Driver datasheet
PDF, 1.9 Мб, Версия: C, Файл опубликован: 25 сен 2007
Выписка из документа

Цены

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Драйвер FET, Driver 3A 2Out High Speed Non-Inv 20Pin CLLCC Tube
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UC1708L883B
Texas Instruments
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UC1708L/883B
Texas Instruments
9 060 ₽
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UC1708L883B
Texas Instruments
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Статус

Статус продуктаВ производстве (Рекомендуется для новых разработок)
Доступность образцов у производителяНет

Корпус / Упаковка / Маркировка

Pin20202020
Package TypeFKFKFKFK
Industry STD TermLCCCLCCCLCCCLCCC
JEDEC CodeS-CQCC-NS-CQCC-NS-CQCC-NS-CQCC-N
Package QTY1111
CarrierTUBETUBETUBETUBE
Маркировка883B0051401Q2A5962-UC1708L/
Width (мм)8.898.898.898.89
Length (мм)8.898.898.898.89
Thickness (мм)1.831.831.831.83
Pitch (мм)1.271.271.271.27
Max Height (мм)2.032.032.032.03
Mechanical DataСкачатьСкачатьСкачатьСкачать

Параметры

Fall Time25 нс
Input ThresholdCMOS,TTL
Input VCC(Max)35 В
Input VCC(Min)5 В
Количество каналов2
Рабочий диапазон температурот -55 до 125 C
Package GroupLCCC
Peak Output Current3 A
Power SwitchMOSFET
Prop Delay25 нс
RatingMilitary
Rise Time25 нс
Special FeaturesEnable Pin,Shutdown,Thermal Shutdown

Экологический статус

RoHSSee ti.com

Application Notes

  • DN-35 IGBT Drive Using MOSFET Gate Drivers
    PDF, 54 Кб, Файл опубликован: 5 сен 1999
    The UC1708 family of power drivers is made with a high-speed high-voltage Schottky process to interface control functions and high-power switching devices-particularly power MOSFETs. The UC1724 family of Isolated Drive Transmitters along with the UC1725 Isolated Drivers provides a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices
  • U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics
    PDF, 573 Кб, Файл опубликован: 5 сен 1999
    The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola
  • U-137 Practical Considerations in High Performance MOSFET IGBT and MCT Gate
    PDF, 244 Кб, Файл опубликован: 5 сен 1999
    The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad

Модельный ряд

Классификация производителя

  • Semiconductors > Space & High Reliability > Power Management Products > MOSFET and IGBT Gate Driver

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