Datasheet Texas Instruments UC1709J — Даташит
| Производитель | Texas Instruments |
| Серия | UC1709 |
| Модель | UC1709J |
Инвертирование высокоскоростных драйверов MOSFET 8-CDIP от -55 до 125
Datasheets
UC3709 Dual High-Speed FET Driver datasheet
PDF, 548 Кб, Версия: C, Файл опубликован: 27 фев 2008
Выписка из документа
Цены
Купить UC1709J на РадиоЛоцман.Цены — от 1 842 до 4 324 ₽ 11 предложений от 11 поставщиков MOSFET DRVR 1.5A 2Out High Speed Inv 8Pin CDIP | |||
| UC1709J Texas Instruments | 1 842 ₽ | ||
| UC1709J Texas Instruments | 1 883 ₽ | ||
| UC1709J | по запросу | ||
| UC1709J/883B Texas Instruments | по запросу | ||
Статус
| Статус продукта | В производстве (Рекомендуется для новых разработок) |
| Доступность образцов у производителя | Нет |
Корпус / Упаковка / Маркировка
| Pin | 8 |
| Package Type | JG |
| Industry STD Term | CDIP |
| JEDEC Code | R-GDIP-T |
| Package QTY | 1 |
| Carrier | TUBE |
| Маркировка | UC1709J |
| Width (мм) | 6.67 |
| Length (мм) | 9.6 |
| Thickness (мм) | 4.57 |
| Pitch (мм) | 2.54 |
| Max Height (мм) | 5.08 |
| Mechanical Data | Скачать |
Параметры
| Fall Time | 40 нс |
| Input Threshold | TTL |
| Input VCC(Max) | 40 В |
| Input VCC(Min) | 5 В |
| Количество каналов | 2 |
| Рабочий диапазон температур | от -55 до 125 C |
| Package Group | CDIP |
| Peak Output Current | 1.5 A |
| Power Switch | MOSFET |
| Prop Delay | 25 нс |
| Rating | Military |
| Rise Time | 40 нс |
| Special Features | Thermal Shutdown |
Экологический статус
| RoHS | See ti.com |
Application Notes
- U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching CharacteristicsPDF, 573 Кб, Файл опубликован: 5 сен 1999
The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola - U-137 Practical Considerations in High Performance MOSFET IGBT and MCT GatePDF, 244 Кб, Файл опубликован: 5 сен 1999
The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad
Модельный ряд
Серия: UC1709 (4)
- UC1709J UC1709J883B UC1709L UC1709L883B
Классификация производителя
- Semiconductors > Space & High Reliability > Power Management Products > MOSFET and IGBT Gate Driver
