Datasheet Texas Instruments UC2705D — Даташит
| Производитель | Texas Instruments |
| Серия | UC2705 |
| Модель | UC2705D |
Дополнительный высокоскоростной драйвер питания 8-SOIC от -40 до 85
Datasheets
High Speed Power Driver datasheet
PDF, 891 Кб, Версия: D, Файл опубликован: 8 мар 2012
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Цены
 Купить UC2705D на РадиоЛоцман.Цены — от 154 до 543 ₽15 предложений от 12 поставщиков Интегральные схемы (ИС) усилителей мощности Comp Hi-Speed Power Driver | |||
| UC2705D/81278 Texas Instruments | 154 ₽ | ||
| UC2705D Texas Instruments | 328 ₽ | ||
| UC2705D/81278 | 356 ₽ | ||
| UC2705D | по запросу | ||
Статус
| Статус продукта | В производстве (Рекомендуется для новых разработок) |
| Доступность образцов у производителя | Да |
Корпус / Упаковка / Маркировка
| Pin | 8 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 75 |
| Carrier | TUBE |
| Маркировка | UC2705D |
| Width (мм) | 3.91 |
| Length (мм) | 4.9 |
| Thickness (мм) | 1.58 |
| Pitch (мм) | 1.27 |
| Max Height (мм) | 1.75 |
| Mechanical Data | Скачать |
Параметры
| Channel Input Logic | N/A |
| Fall Time | 40 нс |
| Input Threshold | TTL |
| Input VCC(Max) | 40 В |
| Input VCC(Min) | 5 В |
| Количество каналов | 1 |
| Рабочий диапазон температур | от -40 до 85 C |
| Package Group | SOIC |
| Peak Output Current | 1.5 A |
| Power Switch | MOSFET,IGBT |
| Prop Delay | 100 нс |
| Rating | Catalog |
| Rise Time | 40 нс |
| Special Features | N/A |
Экологический статус
| RoHS | Совместим |
Application Notes
- U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching CharacteristicsPDF, 573 Кб, Файл опубликован: 5 сен 1999
The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola - U-137 Practical Considerations in High Performance MOSFET IGBT and MCT GatePDF, 244 Кб, Файл опубликован: 5 сен 1999
The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad
Модельный ряд
Классификация производителя
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver
