Datasheet Texas Instruments CSD13303W1015 — Даташит

CSD13303W1015
www.ti.com SLPS298A – MAY 2012 – REVISED MAY 2012 N-Channel NexFET™ Power MOSFET
Check for Samples: CSD13303W1015 FEATURES 1 PRODUCT SUMMARY Ultra Low on Resistance
Ultra Low Qg and Qgd
Small Footprint
Low Profile 0.62 mm Height
Pb Free
RoHS Compliant
Halogen Free
CSP 1 × 1.5 mm Wafer Level Package TA = 25°C unless otherwise stated UNIT Drain to Source Voltage 12 V Qg Gate Charge Total (4.5V) 3.9 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Voltage Threshold 0.4 nC VGS = 2.5V 18 mΩ VGS = 4.5V 16 mΩ 0.85 V ORDERING INFORMATION
Device Package Media Qty Ship CSD13303W1015 1 Г— 1.5 Wafer
Level Package 7-inch reel 3000 Tape and
Reel APPLICATIONS TYPICAL VALUE VDS Battery Management
Load Switch
Battery Protection ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile.
Top View VALUE UNIT VDS Drain to Source Voltage 12 V VGS Gate to Source Voltage ±8 V ID Continuous Drain Current, TC = 25°C(1) 3.5 A IDM Pulsed Drain Current, TA = 25°C(2) 31 A PD Power Dissipation(1) 1.65 W TSTG Storage Temperature Range TJ Operating Junction Temperature Range –55 to 150 °C (1) Typical RθJA = 75.7°C/W on 1in2 Cu (2 oz.) on 0.060" thick
FR4 PCB.
(2) Pulse width ≤1ms, duty cycle ≤2% RDS(ON) vs VGS Gate Charge …