Datasheet Texas Instruments CSD17551Q5A — Даташит

CSD17551Q5A
www.ti.com SLPS375 – MAY 2012 30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17551Q5A FEATURES 1 PRODUCT SUMMARY Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package VDS Drain to Source Voltage 30 V Qg Gate Charge Total (4.5V) 6.0 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage nC
9 mΩ VGS = 10V 7 mΩ 1.7 V ORDERING INFORMATION
Device Package Media CSD17551Q5A SON 5-mm Г— 6-mm
Plastic Package 13-Inch
Reel APPLICATIONS 1.4
VGS = 4.5V Point of load Synchronous Buck in
Networking, Telecom and Computing Systems
Optimized for Control FET Applications Qty Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated VALUE UNIT DESCRIPTION VDS Drain to Source Voltage 30 V The NexFET power MOSFET has been designed to
minimize losses in power conversion applications. VGS Gate to Source Voltage В±20 V Continuous Drain Current, TC = 25В°C 48 A 13.5 A Figure 1. Top View
S 8 1 D S 2 7 D S 3 6 D G 4 Continuous Drain Current, TA = 25В°C(1) IDM Pulsed Drain Current, TA = 25В°C(2) 85 A PD Power Dissipation(1) 3 W TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse
ID = 25A, L = 0.1mH, RG = 25Ω 31.3 mJ (1) Typical RОёJA = 41.9В°C/W on a 1-inch2 (6.45-cm2), …