Datasheet Texas Instruments CSD25211W1015 — Даташит

CSD25211W1015
www.ti.com SLPS296A – FEBRUARY 2012 – REVISED JANUARY 2014 CSD25211W1015, P-Channel NexFET™ Power MOSFET
Check for Samples: CSD25211W1015 FEATURES 1 2 PRODUCT SUMMARY Ultra-Low On Resistance
Ultra-Low Qg and Qgd
Small Footprint 1.0 mm Г— 1.5 mm
Low Profile 0.62 mm Height
Pb Free
Gate-Source Voltage Clamp
Gate ESD Protection – 3 kV
RoHS Compliant
Halogen Free TA = 25°C unless otherwise stated UNIT Drain-to-Source Voltage –20 V Qg Gate Charge Total (-4.5V) 3.4 nC Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Voltage Threshold 0.2 nC VGS = –2.5 V 36 mΩ VGS = –4.5 V 27 mΩ –0.8 V ORDERING INFORMATION APPLICATIONS TYPICAL VALUE VDS Battery Management
Load Switch
Battery Protection Device Package Media Qty Ship CSD25211W1015 1 Г— 1.5 Wafer
Level Package 7-inch reel 3000 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated DESCRIPTION
The device is designed to deliver the lowest on
resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra-low profile.
Top View VALUE UNIT VDS Drain-to-Source Voltage -20 V VGS Gate-to-Source Voltage -6 V ID Continuous Drain Current, TA = 25°C(1) -3.2 A IDM Pulsed Drain Current, TA = 25°C(2) -9.5 A Continuous Drain Current, TA = 25°C -0.5 A IG Pulsed Drain Current -7 A PD Power Dissipation(1) 1 W TSTG Storage Temperature Range TJ Operating Junction Temperature Range –55 to 150 °C (1) Typical RθJA = 119°C/W on 1 inch2 of 2 oz. Cu on 0.06-inch
thick FR4 PCB.
(2) Pulse width ≤ 10 Вµs, duty cycle ≤ 2% RDS(ON) vs VGS Gate Charge …