Datasheet Infineon IRF8301MTRPBF — Даташит

StrongIRFET
IRF8301MTRPbF
DirectFETВ™ Power MOSFET В‚ Ultra-low RDS(on)
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible ВЃ
l Ultra-low Package Inductance
l Optimized for high speed switching or high current
switch (Power Tool)
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques ВЃ
l Typical values (unless otherwise specified) VDSS VGS 30V max ±20V max RDS(on) RDS(on) 1.3mΩ@10V 1.9mΩ@ 4.5V DirectFET™ ISOMETRIC MT
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)ВЃ
SQ SX ST MQ MX MT MP Description
The IRF8301MPbF combines the latest HEXFETВ® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools. Ordering Information
Base Part Number Package Type IRF8301MPbF DirectFET MT VGS
ID @ T A = 25В°C …