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Datasheet Texas Instruments 74AC11000 — Даташит

ПроизводительTexas Instruments
Серия74AC11000
Datasheet Texas Instruments 74AC11000

Quadruple 2-Input Positive-NAND Gates

Datasheets

74AC11000 datasheet
PDF, 778 Кб, Версия: B, Файл опубликован: 2 июн 2005
Выписка из документа

Цены

21 предложений от 18 поставщиков
Логические элементы Quadruple 2-Input Positive-NAND gates
74AC11000D
Texas Instruments
43 ₽
EIS Components
Весь мир
74AC11000NSR
Texas Instruments
75 ₽
FAV Technology
Весь мир
74AC11000D
Texas Instruments
по запросу
Кремний
Россия и страны СНГ
74AC11000NE4
по запросу
Выбираем схему BMS для заряда литий-железофосфатных (LiFePO4) аккумуляторов

Статус

74AC11000D74AC11000DR74AC11000N
Статус продуктаВ производствеВ производствеВ производстве
Доступность образцов у производителяНетНетНет

Корпус / Упаковка / Маркировка

74AC11000D74AC11000DR74AC11000N
N123
Pin161616
Package TypeDDN
Industry STD TermSOICSOICPDIP
JEDEC CodeR-PDSO-GR-PDSO-GR-PDIP-T
Package QTY40250025
CarrierTUBELARGE T&RTUBE
МаркировкаAC11000AC1100074AC11000N
Width (мм)3.913.916.35
Length (мм)9.99.919.3
Thickness (мм)1.581.583.9
Pitch (мм)1.271.272.54
Max Height (мм)1.751.755.08
Mechanical DataСкачатьСкачатьСкачать

Параметры

Parameters / Models74AC11000D
74AC11000D
74AC11000DR
74AC11000DR
74AC11000N
74AC11000N
Bits444
F @ Nom Voltage(Max), Mhz100100100
ICC @ Nom Voltage(Max), мА0.040.040.04
Рабочий диапазон температур, Cот -40 до 85от -40 до 85от -40 до 85
Output Drive (IOL/IOH)(Max), мА24/-2424/-2424/-24
Package GroupSOICSOICPDIP
Package Size: mm2:W x L, PKG16SOIC: 59 mm2: 6 x 9.9(SOIC)16SOIC: 59 mm2: 6 x 9.9(SOIC)See datasheet (PDIP)
RatingCatalogCatalogCatalog
Schmitt TriggerNoNoNo
Technology FamilyACACAC
VCC(Max), В5.55.55.5
VCC(Min), В333
Voltage(Nom), В3.3,53.3,53.3,5
tpd @ Nom Voltage(Max), нс11.1,7.411.1,7.411.1,7.4

Экологический статус

74AC11000D74AC11000DR74AC11000N
RoHSСовместимСовместимСовместим
Бессвинцовая технология (Pb Free)Да

Application Notes

  • Live Insertion
    PDF, 150 Кб, Файл опубликован: 1 окт 1996
    Many applications require the ability to exchange modules in electronic systems without removing the supply voltage from the module (live insertion). For example an electronic telephone exchange must always remain operational even during module maintenance and repair. To avoid damaging components additional circuitry modifications are necessary. This document describes in detail the phenomena tha
  • Introduction to Logic
    PDF, 93 Кб, Файл опубликован: 30 апр 2015
  • Implications of Slow or Floating CMOS Inputs (Rev. D)
    PDF, 260 Кб, Версия: D, Файл опубликован: 23 июн 2016
  • Understanding and Interpreting Standard-Logic Data Sheets (Rev. C)
    PDF, 614 Кб, Версия: C, Файл опубликован: 2 дек 2015
  • Semiconductor Packing Material Electrostatic Discharge (ESD) Protection
    PDF, 337 Кб, Файл опубликован: 8 июл 2004
    Forty-eight-pin TSSOP components that were packaged using Texas Instruments (TI) standard packing methodology were subjected to electrical discharges between 0.5 and 20 kV as generated by an IEC ESD simulator to determine the level of ISD protection provided by the packing materials. The testing included trays tape and reel and magazines. Additional units were subjected to the same discharge
  • TI IBIS File Creation Validation and Distribution Processes
    PDF, 380 Кб, Файл опубликован: 29 авг 2002
    The Input/Output Buffer Information Specification (IBIS) also known as ANSI/EIA-656 has become widely accepted among electronic design automation (EDA) vendors semiconductor vendors and system designers as the format for digital electrical interface data. Because IBIS models do not reveal proprietary internal processes or architectural information semiconductor vendors? support for IBIS con
  • CMOS Power Consumption and CPD Calculation (Rev. B)
    PDF, 89 Кб, Версия: B, Файл опубликован: 1 июн 1997
    Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale
  • Input and Output Characteristics of Digital Integrated Circuits
    PDF, 1.7 Мб, Файл опубликован: 1 окт 1996
    This report contains a comprehensive collection of the input and output characteristic curves of typical integrated circuits from various logic families. These curves go beyond the information given in data sheets by providing additional details regarding the characteristics of the components. This knowledge is particularly useful when for example a decision must be made as to which circuit shou
  • Designing With Logic (Rev. C)
    PDF, 186 Кб, Версия: C, Файл опубликован: 1 июн 1997
    Data sheets which usually give information on device behavior only under recommended operating conditions may only partially answer engineering questions that arise during the development of systems using logic devices. However information is frequently needed regarding the behavior of the device outside the conditions in the data sheet. Such questions might be:?How does a bus driver behave w
  • Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc
    PDF, 43 Кб, Файл опубликован: 1 апр 1996
    Though low power consumption is a feature of CMOS devices sometimes this feature does not meet a designer?s system power supply constraints. Therefore a partial system power down or multiple Vcc supplies are used to meet the needs of the system. This document shows electrostatic discharge protection circuits. It also provides circuit and bus driver examples of partial system power down and curren

Модельный ряд

Серия: 74AC11000 (3)

Классификация производителя

  • Semiconductors> Logic> Gate> NAND Gate

На английском языке: Datasheet Texas Instruments 74AC11000

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