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Datasheet Texas Instruments 74ACT11257 — Даташит

ПроизводительTexas Instruments
Серия74ACT11257
Datasheet Texas Instruments 74ACT11257

Четверные 2-линейные 1-линейные селекторы/мультиплексоры данных с выходами с 3 состояниями

Datasheets

Quadruple 2-Line To 1-Line Data Selector/Multiplexer With 3-State Outputs datasheet
PDF, 1.0 Мб, Версия: B, Файл опубликован: 1 апр 1996
Выписка из документа

Цены

27 предложений от 21 поставщиков
Кодеры, декодеры, мультиплексоры и демультиплексоры Quad 2 To 1-Line Data Sel/Multipl
Akcel
Весь мир
74ACT11257PWR
Texas Instruments
от 73 ₽
EIS Components
Весь мир
74ACT11257DBR
Texas Instruments
73 ₽
LifeElectronics
Россия
74ACT11257PW
Texas Instruments
по запросу
ТаймЧипс
Россия
74ACT11257DWE4
Texas Instruments
по запросу
Технология правильного хранения аккумуляторов и батареек по рекомендациям FANSO и EVE Energy

Статус

74ACT11257DW74ACT11257DWR74ACT11257PW
Статус продуктаВ производствеВ производствеВ производстве
Доступность образцов у производителяНетНетНет

Корпус / Упаковка / Маркировка

74ACT11257DW74ACT11257DWR74ACT11257PW
N123
Pin202020
Package TypeDWDWPW
Industry STD TermSOICSOICTSSOP
JEDEC CodeR-PDSO-GR-PDSO-GR-PDSO-G
Package QTY25200070
CarrierTUBELARGE T&RTUBE
МаркировкаACT11257ACT11257AT257
Width (мм)7.57.54.4
Length (мм)12.812.86.5
Thickness (мм)2.352.351
Pitch (мм)1.271.27.65
Max Height (мм)2.652.651.2
Mechanical DataСкачатьСкачатьСкачать

Параметры

Parameters / Models74ACT11257DW
74ACT11257DW
74ACT11257DWR
74ACT11257DWR
74ACT11257PW
74ACT11257PW
Полоса частот, МГц100100100
Bits222
Количество каналов444
Configuration2:12:12:1
Digital input leakage(Max), uA555
ESD Charged Device Model, kV0.750.750.75
ESD HBM, kV222
F @ Nom Voltage(Max), Mhz909090
FunctionEncoder/MultiplexerEncoder/MultiplexerEncoder/Multiplexer
ICC @ Nom Voltage(Max), мА0.080.080.08
Рабочий диапазон температур, Cот -40 до 85от -40 до 85от -40 до 85
Output Drive (IOL/IOH)(Max), мА24/-2424/-2424/-24
Package GroupSOICSOICTSSOP
Package Size: mm2:W x L, PKG20SOIC: 132 mm2: 10.3 x 12.8(SOIC)20SOIC: 132 mm2: 10.3 x 12.8(SOIC)20TSSOP: 42 mm2: 6.4 x 6.5(TSSOP)
RatingCatalogCatalogCatalog
Schmitt TriggerNoNoNo
Technology FamilyACTACTACT
Тип3-State Output3-State Output3-State Output
VCC(Max), В5.55.55.5
VCC(Min), В4.54.54.5
Voltage(Nom), В555
tpd @ Nom Voltage(Max), нс888

Экологический статус

74ACT11257DW74ACT11257DWR74ACT11257PW
RoHSСовместимСовместимСовместим

Application Notes

  • Selecting the Right Level Translation Solution (Rev. A)
    PDF, 313 Кб, Версия: A, Файл опубликован: 22 июн 2004
    Supply voltages continue to migrate to lower nodes to support today's low-power high-performance applications. While some devices are capable of running at lower supply nodes others might not have this capability. To haveswitching compatibility between these devices the output of each driver must be compliant with the input of the receiver that it is driving. There are several level-translati
  • Introduction to Logic
    PDF, 93 Кб, Файл опубликован: 30 апр 2015
  • Implications of Slow or Floating CMOS Inputs (Rev. D)
    PDF, 260 Кб, Версия: D, Файл опубликован: 23 июн 2016
  • Understanding and Interpreting Standard-Logic Data Sheets (Rev. C)
    PDF, 614 Кб, Версия: C, Файл опубликован: 2 дек 2015
  • Semiconductor Packing Material Electrostatic Discharge (ESD) Protection
    PDF, 337 Кб, Файл опубликован: 8 июл 2004
    Forty-eight-pin TSSOP components that were packaged using Texas Instruments (TI) standard packing methodology were subjected to electrical discharges between 0.5 and 20 kV as generated by an IEC ESD simulator to determine the level of ISD protection provided by the packing materials. The testing included trays tape and reel and magazines. Additional units were subjected to the same discharge
  • TI IBIS File Creation Validation and Distribution Processes
    PDF, 380 Кб, Файл опубликован: 29 авг 2002
    The Input/Output Buffer Information Specification (IBIS) also known as ANSI/EIA-656 has become widely accepted among electronic design automation (EDA) vendors semiconductor vendors and system designers as the format for digital electrical interface data. Because IBIS models do not reveal proprietary internal processes or architectural information semiconductor vendors? support for IBIS con
  • CMOS Power Consumption and CPD Calculation (Rev. B)
    PDF, 89 Кб, Версия: B, Файл опубликован: 1 июн 1997
    Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale
  • Designing With Logic (Rev. C)
    PDF, 186 Кб, Версия: C, Файл опубликован: 1 июн 1997
    Data sheets which usually give information on device behavior only under recommended operating conditions may only partially answer engineering questions that arise during the development of systems using logic devices. However information is frequently needed regarding the behavior of the device outside the conditions in the data sheet. Such questions might be:?How does a bus driver behave w
  • Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc
    PDF, 43 Кб, Файл опубликован: 1 апр 1996
    Though low power consumption is a feature of CMOS devices sometimes this feature does not meet a designer?s system power supply constraints. Therefore a partial system power down or multiple Vcc supplies are used to meet the needs of the system. This document shows electrostatic discharge protection circuits. It also provides circuit and bus driver examples of partial system power down and curren

Модельный ряд

Серия: 74ACT11257 (3)

Классификация производителя

  • Semiconductors> Switches and Multiplexers> Buffered Encoders and Decoders

На английском языке: Datasheet Texas Instruments 74ACT11257

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