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Datasheet Texas Instruments 74ACT11373 — Даташит

ПроизводительTexas Instruments
Серия74ACT11373
Datasheet Texas Instruments 74ACT11373

Восьмеричные прозрачные защелки типа D с выходами с 3 состояниями

Datasheets

Octal D-Type Transparent Latch With 3-State Outputs datasheet
PDF, 848 Кб, Версия: B, Файл опубликован: 1 апр 1996
Выписка из документа

Цены

25 предложений от 23 поставщиков
Микросхема Логический чип, Latch Transparent 3-ST 8CH D-Type 24Pin SSOP T/R
727GS
Весь мир
74ACT11373DBR
Rochester Electronics
от 8.92 ₽
IC Home
Весь мир
74ACT11373DBLE
Texas Instruments
61 ₽
LifeElectronics
Россия
74ACT11373DWG4
Texas Instruments
по запросу
ТаймЧипс
Россия
74ACT11373NSRG4
Texas Instruments
по запросу

Статус

74ACT11373DBR74ACT11373DW74ACT11373DWG474ACT11373DWR
Статус продуктаВ производствеВ производствеВ производствеВ производстве
Доступность образцов у производителяНетНетНетНет

Корпус / Упаковка / Маркировка

74ACT11373DBR74ACT11373DW74ACT11373DWG474ACT11373DWR
N1234
Pin24242424
Package TypeDBDWDWDW
Industry STD TermSSOPSOICSOICSOIC
JEDEC CodeR-PDSO-GR-PDSO-GR-PDSO-GR-PDSO-G
Package QTY200025252000
CarrierLARGE T&RTUBETUBELARGE T&R
МаркировкаAT373ACT11373ACT11373ACT11373
Width (мм)5.37.57.57.5
Length (мм)8.215.415.415.4
Thickness (мм)1.952.352.352.35
Pitch (мм).651.271.271.27
Max Height (мм)22.652.652.65
Mechanical DataСкачатьСкачатьСкачатьСкачать

Параметры

Parameters / Models74ACT11373DBR
74ACT11373DBR
74ACT11373DW
74ACT11373DW
74ACT11373DWG4
74ACT11373DWG4
74ACT11373DWR
74ACT11373DWR
3-State OutputYesYesYesYes
Bits8888
F @ Nom Voltage(Max), Mhz90909090
ICC @ Nom Voltage(Max), мА0.080.080.080.08
Рабочий диапазон температур, Cот -40 до 85от -40 до 85от -40 до 85от -40 до 85
Output Drive (IOL/IOH)(Max), мА24/-2424/-2424/-2424/-24
Package GroupSSOPSOICSOICSOIC
Package Size: mm2:W x L, PKG24SSOP: 64 mm2: 7.8 x 8.2(SSOP)24SOIC: 160 mm2: 10.3 x 15.5(SOIC)24SOIC: 160 mm2: 10.3 x 15.5(SOIC)24SOIC: 160 mm2: 10.3 x 15.5(SOIC)
RatingCatalogCatalogCatalogCatalog
Schmitt TriggerNoNoNoNo
Technology FamilyACTACTACTACT
VCC(Max), В5.55.55.55.5
VCC(Min), В4.54.54.54.5
Voltage(Nom), В5555
tpd @ Nom Voltage(Max), нс11.811.811.811.8

Экологический статус

74ACT11373DBR74ACT11373DW74ACT11373DWG474ACT11373DWR
RoHSСовместимСовместимСовместимСовместим

Application Notes

  • Selecting the Right Level Translation Solution (Rev. A)
    PDF, 313 Кб, Версия: A, Файл опубликован: 22 июн 2004
    Supply voltages continue to migrate to lower nodes to support today's low-power high-performance applications. While some devices are capable of running at lower supply nodes others might not have this capability. To haveswitching compatibility between these devices the output of each driver must be compliant with the input of the receiver that it is driving. There are several level-translati
  • Introduction to Logic
    PDF, 93 Кб, Файл опубликован: 30 апр 2015
  • Implications of Slow or Floating CMOS Inputs (Rev. D)
    PDF, 260 Кб, Версия: D, Файл опубликован: 23 июн 2016
  • Understanding and Interpreting Standard-Logic Data Sheets (Rev. C)
    PDF, 614 Кб, Версия: C, Файл опубликован: 2 дек 2015
  • Semiconductor Packing Material Electrostatic Discharge (ESD) Protection
    PDF, 337 Кб, Файл опубликован: 8 июл 2004
    Forty-eight-pin TSSOP components that were packaged using Texas Instruments (TI) standard packing methodology were subjected to electrical discharges between 0.5 and 20 kV as generated by an IEC ESD simulator to determine the level of ISD protection provided by the packing materials. The testing included trays tape and reel and magazines. Additional units were subjected to the same discharge
  • TI IBIS File Creation Validation and Distribution Processes
    PDF, 380 Кб, Файл опубликован: 29 авг 2002
    The Input/Output Buffer Information Specification (IBIS) also known as ANSI/EIA-656 has become widely accepted among electronic design automation (EDA) vendors semiconductor vendors and system designers as the format for digital electrical interface data. Because IBIS models do not reveal proprietary internal processes or architectural information semiconductor vendors? support for IBIS con
  • CMOS Power Consumption and CPD Calculation (Rev. B)
    PDF, 89 Кб, Версия: B, Файл опубликован: 1 июн 1997
    Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale
  • Power-Up Behavior of Clocked Devices (Rev. A)
    PDF, 34 Кб, Версия: A, Файл опубликован: 6 фев 2015
  • Designing With Logic (Rev. C)
    PDF, 186 Кб, Версия: C, Файл опубликован: 1 июн 1997
    Data sheets which usually give information on device behavior only under recommended operating conditions may only partially answer engineering questions that arise during the development of systems using logic devices. However information is frequently needed regarding the behavior of the device outside the conditions in the data sheet. Such questions might be:?How does a bus driver behave w
  • Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc
    PDF, 43 Кб, Файл опубликован: 1 апр 1996
    Though low power consumption is a feature of CMOS devices sometimes this feature does not meet a designer?s system power supply constraints. Therefore a partial system power down or multiple Vcc supplies are used to meet the needs of the system. This document shows electrostatic discharge protection circuits. It also provides circuit and bus driver examples of partial system power down and curren

Модельный ряд

Классификация производителя

  • Semiconductors> Logic> Flip-Flop/Latch/Register> D-Type Latch

На английском языке: Datasheet Texas Instruments 74ACT11373

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