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Datasheet Texas Instruments CD54ACT20 — Даташит

ПроизводительTexas Instruments
СерияCD54ACT20
Datasheet Texas Instruments CD54ACT20

Dual 4-Input NAND Gates

Datasheets

CD54ACT20, CD74ACT20 datasheet
PDF, 970 Кб, Файл опубликован: 15 ноя 2002
Выписка из документа

Цены

LifeElectronics
Россия
CD54ACT20
Texas Instruments
по запросу
T-electron
Россия и страны СНГ
CD54ACT20
Texas Instruments
по запросу
Сравнительное тестирование аккумуляторов EVE Energy и Samsung типоразмера 18650

Статус

5962-0051301QCACD54ACT20F3A
Статус продуктаВ производствеВ производстве
Доступность образцов у производителяНетНет

Корпус / Упаковка / Маркировка

5962-0051301QCACD54ACT20F3A
N12
Pin1414
Package TypeJJ
Industry STD TermCDIPCDIP
JEDEC CodeR-GDIP-TR-GDIP-T
Package QTY11
CarrierTUBETUBE
МаркировкаCD54ACT20F3ACD54ACT20F3A
Width (мм)6.676.67
Length (мм)19.5619.56
Thickness (мм)4.574.57
Pitch (мм)2.542.54
Max Height (мм)5.085.08
Mechanical DataСкачатьСкачать

Параметры

Parameters / Models5962-0051301QCA
5962-0051301QCA
CD54ACT20F3A
CD54ACT20F3A
Approx. price, US$17.291 | 100u
Bits2
Data rate(Max), Mbps100
F @ Nom Voltage(Max), Mhz90
Основные особенностиVery high speed (tpd 5-10ns)
ICC @ Nom Voltage(Max), мА0.04
IOH(Max), мА-24
IOL(Max), мА24
Тип входаTTL
Input typeTTL-Compatible CMOS
Inputs per channel4
Number of channels2
Рабочий диапазон температур, Cот -55 до 125
Operating temperature range, C-55 to 125
Output Drive (IOL/IOH)(Max), мА24/-24
Тип выходаCMOS
Output typePush-Pull
Package GroupCDIP|14CDIP
Package Size: mm2:W x L, PKGSee datasheet (CDIP)
Package size: mm2:W x L, PKG14CDIP: 130 mm2: 6.67 x 19.56 (CDIP|14)
RatingMilitaryMilitary
Schmitt TriggerNo
Supply voltage(Max), В5.5
Supply voltage(Min), В4.5
Technology FamilyACTACT
VCC(Max), В5.5
VCC(Min), В4.5
tpd @ Nom Voltage(Max), нс12.3

Экологический статус

5962-0051301QCACD54ACT20F3A
RoHSНе совместимSee ti.com
Бессвинцовая технология (Pb Free)Да

Application Notes

  • Selecting the Right Level Translation Solution (Rev. A)
    PDF, 313 Кб, Версия: A, Файл опубликован: 22 июн 2004
    Supply voltages continue to migrate to lower nodes to support today's low-power high-performance applications. While some devices are capable of running at lower supply nodes others might not have this capability. To haveswitching compatibility between these devices the output of each driver must be compliant with the input of the receiver that it is driving. There are several level-translati
  • Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc
    PDF, 43 Кб, Файл опубликован: 1 апр 1996
    Though low power consumption is a feature of CMOS devices sometimes this feature does not meet a designer?s system power supply constraints. Therefore a partial system power down or multiple Vcc supplies are used to meet the needs of the system. This document shows electrostatic discharge protection circuits. It also provides circuit and bus driver examples of partial system power down and curren
  • TI IBIS File Creation Validation and Distribution Processes
    PDF, 380 Кб, Файл опубликован: 29 авг 2002
    The Input/Output Buffer Information Specification (IBIS) also known as ANSI/EIA-656 has become widely accepted among electronic design automation (EDA) vendors semiconductor vendors and system designers as the format for digital electrical interface data. Because IBIS models do not reveal proprietary internal processes or architectural information semiconductor vendors? support for IBIS con
  • Understanding and Interpreting Standard-Logic Data Sheets (Rev. C)
    PDF, 614 Кб, Версия: C, Файл опубликован: 2 дек 2015
  • Semiconductor Packing Material Electrostatic Discharge (ESD) Protection
    PDF, 337 Кб, Файл опубликован: 8 июл 2004
    Forty-eight-pin TSSOP components that were packaged using Texas Instruments (TI) standard packing methodology were subjected to electrical discharges between 0.5 and 20 kV as generated by an IEC ESD simulator to determine the level of ISD protection provided by the packing materials. The testing included trays tape and reel and magazines. Additional units were subjected to the same discharge
  • Designing With Logic (Rev. C)
    PDF, 186 Кб, Версия: C, Файл опубликован: 1 июн 1997
    Data sheets which usually give information on device behavior only under recommended operating conditions may only partially answer engineering questions that arise during the development of systems using logic devices. However information is frequently needed regarding the behavior of the device outside the conditions in the data sheet. Such questions might be:?How does a bus driver behave w
  • Introduction to Logic
    PDF, 93 Кб, Файл опубликован: 30 апр 2015
  • Implications of Slow or Floating CMOS Inputs (Rev. D)
    PDF, 260 Кб, Версия: D, Файл опубликован: 23 июн 2016
  • CMOS Power Consumption and CPD Calculation (Rev. B)
    PDF, 89 Кб, Версия: B, Файл опубликован: 1 июн 1997
    Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale

Модельный ряд

Серия: CD54ACT20 (2)

Классификация производителя

  • Semiconductors> Space & High Reliability> Logic Products> Gate Products

На английском языке: Datasheet Texas Instruments CD54ACT20

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