Datasheet Texas Instruments CD54HCT02 — Даташит
| Производитель | Texas Instruments |
| Серия | CD54HCT02 |
High Speed CMOS Logic Quad Two-Input NOR Gates
Datasheets
CD54HC02, CD74HC02, CD54HCT02, CD74HCT02 datasheet
PDF, 717 Кб, Версия: C, Файл опубликован: 21 авг 2003
Выписка из документа
Цены
 Купить CD54HCT02 на РадиоЛоцман.Цены — от 414 до 5 725 ₽17 предложений от 14 поставщиков NOR Gate, HCT Series, 4-Func, 2-Input, CMOS, CDIP14 | |||
| CD54HCT02F Texas Instruments | 414 ₽ | ||
| CD54HCT02F Texas Instruments | 699 ₽ | ||
| CD54HCT02F Harris | по запросу | ||
| CD54HCT02H Texas Instruments | по запросу | ||
Статус
| 5962-8975101CA | CD54HCT02F | CD54HCT02F3A | |
|---|---|---|---|
| Статус продукта | В производстве | В производстве | В производстве |
| Доступность образцов у производителя | Нет | Нет | Нет |
Корпус / Упаковка / Маркировка
| 5962-8975101CA | CD54HCT02F | CD54HCT02F3A | |
|---|---|---|---|
| N | 1 | 2 | 3 |
| Pin | 14 | 14 | 14 |
| Package Type | J | J | J |
| Industry STD Term | CDIP | CDIP | CDIP |
| JEDEC Code | R-GDIP-T | R-GDIP-T | R-GDIP-T |
| Package QTY | 1 | 1 | 1 |
| Carrier | TUBE | TUBE | TUBE |
| Width (мм) | 6.67 | 6.67 | 6.67 |
| Length (мм) | 19.56 | 19.56 | 19.56 |
| Thickness (мм) | 4.57 | 4.57 | 4.57 |
| Pitch (мм) | 2.54 | 2.54 | 2.54 |
| Max Height (мм) | 5.08 | 5.08 | 5.08 |
| Mechanical Data | Скачать | Скачать | Скачать |
| Маркировка | CD54HCT02F | CD54HCT02F3A |
Параметры
| Parameters / Models | 5962-8975101CA | CD54HCT02F | CD54HCT02F3A |
|---|---|---|---|
| Bits | 4 | 4 | 4 |
| F @ Nom Voltage(Max), Mhz | 25 | 25 | 25 |
| ICC @ Nom Voltage(Max), мА | 0.02 | 0.02 | 0.02 |
| Тип входа | TTL | TTL | TTL |
| Рабочий диапазон температур, C | от -55 до 125 | от -55 до 125 | от -55 до 125 |
| Output Drive (IOL/IOH)(Max), мА | 4/-4 | 4/-4 | 4/-4 |
| Тип выхода | CMOS | CMOS | CMOS |
| Package Group | CDIP | CDIP | CDIP |
| Package Size: mm2:W x L, PKG | See datasheet (CDIP) | See datasheet (CDIP) | See datasheet (CDIP) |
| Rating | Military | Military | Military |
| Schmitt Trigger | No | No | No |
| Technology Family | HCT | HCT | HCT |
| VCC(Max), В | 5.5 | 5.5 | 5.5 |
| VCC(Min), В | 4.5 | 4.5 | 4.5 |
| tpd @ Nom Voltage(Max), нс | 32 | 32 | 32 |
Экологический статус
| 5962-8975101CA | CD54HCT02F | CD54HCT02F3A | |
|---|---|---|---|
| RoHS | See ti.com | See ti.com | See ti.com |
Application Notes
- Using High Speed CMOS and Advanced CMOS in Systems With Multiple VccPDF, 43 Кб, Файл опубликован: 1 апр 1996
Though low power consumption is a feature of CMOS devices sometimes this feature does not meet a designer?s system power supply constraints. Therefore a partial system power down or multiple Vcc supplies are used to meet the needs of the system. This document shows electrostatic discharge protection circuits. It also provides circuit and bus driver examples of partial system power down and curren - SN54/74HCT CMOS Logic Family Applications and RestrictionsPDF, 102 Кб, Файл опубликован: 1 май 1996
The TI SN54/74HCT family of CMOS devices is a subgroup of the SN74HC series with the HCT circuitry modified to meet the interfacing requirements of TTL outputs to high-speed CMOS inputs. The HCT devices can be driven by the TTL circuits directly without additional components. This document describes the TTL/HC interface the operating voltages circuit noise and power consumption. A Bergeron anal - TI IBIS File Creation Validation and Distribution ProcessesPDF, 380 Кб, Файл опубликован: 29 авг 2002
The Input/Output Buffer Information Specification (IBIS) also known as ANSI/EIA-656 has become widely accepted among electronic design automation (EDA) vendors semiconductor vendors and system designers as the format for digital electrical interface data. Because IBIS models do not reveal proprietary internal processes or architectural information semiconductor vendors? support for IBIS con - Understanding and Interpreting Standard-Logic Data Sheets (Rev. C)PDF, 614 Кб, Версия: C, Файл опубликован: 2 дек 2015
- Semiconductor Packing Material Electrostatic Discharge (ESD) ProtectionPDF, 337 Кб, Файл опубликован: 8 июл 2004
Forty-eight-pin TSSOP components that were packaged using Texas Instruments (TI) standard packing methodology were subjected to electrical discharges between 0.5 and 20 kV as generated by an IEC ESD simulator to determine the level of ISD protection provided by the packing materials. The testing included trays tape and reel and magazines. Additional units were subjected to the same discharge - Designing With Logic (Rev. C)PDF, 186 Кб, Версия: C, Файл опубликован: 1 июн 1997
Data sheets which usually give information on device behavior only under recommended operating conditions may only partially answer engineering questions that arise during the development of systems using logic devices. However information is frequently needed regarding the behavior of the device outside the conditions in the data sheet. Such questions might be:?How does a bus driver behave w - Introduction to LogicPDF, 93 Кб, Файл опубликован: 30 апр 2015
- Implications of Slow or Floating CMOS Inputs (Rev. D)PDF, 260 Кб, Версия: D, Файл опубликован: 23 июн 2016
- CMOS Power Consumption and CPD Calculation (Rev. B)PDF, 89 Кб, Версия: B, Файл опубликован: 1 июн 1997
Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale
Модельный ряд
Серия: CD54HCT02 (3)
Классификация производителя
- Semiconductors> Space & High Reliability> Logic Products> Gate Products
