Datasheet ТI ISO5852SQDWRQ1 — Даташит

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SLLSEQ2A – SEPTEMBER 2016 – REVISED DECEMBER 2016 ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver
With Split Outputs and Active Protection Features
1 Features 2 Applications 1 Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to
+125В°C Ambient Operating Temperature
Range
– Device HBM Classification Level 3A
– Device CDM Classification Level C6
100-kV/Ојs Minimum Common-Mode Transient
Immunity (CMTI) at VCM = 1500 V
Split Outputs to Provide 2.5-A Peak Source and
5-A Peak Sink Currents
Short Propagation Delay: 76 ns (Typ),
110 ns (Max)
2-A Active Miller Clamp
Output Short-Circuit Clamp …