Datasheet Texas Instruments LMG1205YFXT — Даташит

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SNOSD37A – MARCH 2017 – REVISED FEBRUARY 2018 LMG1205 80-V, 1.2-A to 5-A, Half Bridge GaN Driver with Integrated Bootstrap Diode
1 Features 3 Description The LMG1205 is designed to drive both the high-side
and the low-side enhancement mode Gallium Nitride
(GaN) FETs in a synchronous buck, boost, or halfbridge configuration. The device has an integrated
100-V bootstrap diode and independent inputs for the
high-side and low-side outputs for maximum control
flexibility. The high-side bias voltage is generated
using a bootstrap technique and is internally clamped
at 5 V, which prevents the gate voltage from
exceeding the maximum gate-source voltage rating of
enhancement mode GaN FETs. The inputs of the
LMG1205 are TTL logic compatible and can
withstand input voltages up to 14 V regardless of the
VDD voltage. The LMG1205 has split-gate outputs,
providing flexibility to adjust the turnon and turnoff
strength independently. 1 Independent High-Side and Low-Side
TTL Logic Inputs …