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Datasheet Texas Instruments 5962-9323901Q3A — Даташит

ПроизводительTexas Instruments
СерияSN54ACT8997
Модель5962-9323901Q3A
Datasheet Texas Instruments 5962-9323901Q3A

Scan Path Linkers With 4-Bit Identification Buses 28-LCCC -55 to 125

Datasheets

Scan Path Linkers With 4-Bit Identification Buses Scan-Controlled IEEE Std datasheet
PDF, 1.0 Мб, Версия: D, Файл опубликован: 1 дек 1996
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SCAN-PATH LINKERS WITH 4-BIT IDENTIFICATION BUSES SCAN-CONTROLLED IEEE STD 1149.1 JTAG TAP CONCATENATORS
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Texas Instruments
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Выбираем схему BMS для заряда литий-железофосфатных (LiFePO4) аккумуляторов

Статус

Статус продуктаВ производстве (Рекомендуется для новых разработок)
Доступность образцов у производителяНет

Корпус / Упаковка / Маркировка

Pin28282828
Package TypeFKFKFKFK
Industry STD TermLCCCLCCCLCCCLCCC
JEDEC CodeS-CQCC-NS-CQCC-NS-CQCC-NS-CQCC-N
Package QTY1111
CarrierTUBETUBETUBETUBE
Маркировка9323901Q3A8997FK5962-SNJ54ACT
Width (мм)11.4311.4311.4311.43
Length (мм)11.4311.4311.4311.43
Thickness (мм)1.831.831.831.83
Pitch (мм)1.271.271.271.27
Max Height (мм)2.032.032.032.03
Mechanical DataСкачатьСкачатьСкачатьСкачать

Параметры

Тип входаTTL
Рабочий диапазон температурот -55 до 125 C
Тип выходаCMOS
Package GroupLCCC
Package Size: mm2:W x L28LCCC: 131 mm2: 11.43 x 11.43(LCCC) PKG
RatingMilitary
Technology FamilyACT
VCC(Max)5.5 В
VCC(Min)4.5 В

Экологический статус

RoHSSee ti.com

Application Notes

  • TI IBIS File Creation Validation and Distribution Processes
    PDF, 380 Кб, Файл опубликован: 29 авг 2002
    The Input/Output Buffer Information Specification (IBIS) also known as ANSI/EIA-656 has become widely accepted among electronic design automation (EDA) vendors semiconductor vendors and system designers as the format for digital electrical interface data. Because IBIS models do not reveal proprietary internal processes or architectural information semiconductor vendors? support for IBIS con
  • Understanding and Interpreting Standard-Logic Data Sheets (Rev. C)
    PDF, 614 Кб, Версия: C, Файл опубликован: 2 дек 2015
  • Semiconductor Packing Material Electrostatic Discharge (ESD) Protection
    PDF, 337 Кб, Файл опубликован: 8 июл 2004
    Forty-eight-pin TSSOP components that were packaged using Texas Instruments (TI) standard packing methodology were subjected to electrical discharges between 0.5 and 20 kV as generated by an IEC ESD simulator to determine the level of ISD protection provided by the packing materials. The testing included trays tape and reel and magazines. Additional units were subjected to the same discharge
  • Selecting the Right Level Translation Solution (Rev. A)
    PDF, 313 Кб, Версия: A, Файл опубликован: 22 июн 2004
    Supply voltages continue to migrate to lower nodes to support today's low-power high-performance applications. While some devices are capable of running at lower supply nodes others might not have this capability. To haveswitching compatibility between these devices the output of each driver must be compliant with the input of the receiver that it is driving. There are several level-translati
  • Designing With Logic (Rev. C)
    PDF, 186 Кб, Версия: C, Файл опубликован: 1 июн 1997
    Data sheets which usually give information on device behavior only under recommended operating conditions may only partially answer engineering questions that arise during the development of systems using logic devices. However information is frequently needed regarding the behavior of the device outside the conditions in the data sheet. Such questions might be:?How does a bus driver behave w
  • Introduction to Logic
    PDF, 93 Кб, Файл опубликован: 30 апр 2015
  • Implications of Slow or Floating CMOS Inputs (Rev. D)
    PDF, 260 Кб, Версия: D, Файл опубликован: 23 июн 2016
  • CMOS Power Consumption and CPD Calculation (Rev. B)
    PDF, 89 Кб, Версия: B, Файл опубликован: 1 июн 1997
    Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale
  • Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc
    PDF, 43 Кб, Файл опубликован: 1 апр 1996
    Though low power consumption is a feature of CMOS devices sometimes this feature does not meet a designer?s system power supply constraints. Therefore a partial system power down or multiple Vcc supplies are used to meet the needs of the system. This document shows electrostatic discharge protection circuits. It also provides circuit and bus driver examples of partial system power down and curren

Модельный ряд

Классификация производителя

  • Semiconductors > Space & High Reliability > Logic Products > Specialty Logic Products > Boundary Scan (JTAG)

Варианты написания:

59629323901Q3A, 5962 9323901Q3A

На английском языке: Datasheet Texas Instruments 5962-9323901Q3A

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