Datasheet Texas Instruments SN65220IDBVRQ1 — Даташит

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SGLS297A -FEBRUARY 2005 -REVISED JUNE 2008
  





DBV
(TOP VIEW)† Circuits from Noise Transients D Port ESD Protection Capability Exceeds:
D
D
D
D -15-kV Human Body Model
-2-kV Machine Model
Available in a WCSP Chip-Scale Package
Stand-Off Voltage . 6 V Min
Low Current Leakage . 1 ВµA Max at 6 V
Low Capacitance . 35 pF Typ Any cabled I/O can be subjected to electrical noise
transients from various sources. These noise transients
can cause damage to the USB transceiver and/or the USB
ASIC if they are of sufficient magnitude and duration.
USB ports are typically implemented in 3-V or 5-V digital
CMOS with limited ESD protection. The SN65220 can
significantly increase the port ESD protection level and
reduce the risk of damage to the circuits of the USB port.
The IEC1000-4-2 ESD performance of the SN65220 is
measured at the system level. Therefore, system design
impacts the results of these tests. A high compliance level …