Datasheet Infineon IRFZ34N — Даташит

PD -94807 IRFZ34NPbF
HEXFETВ® Power MOSFET













Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175В°C Operating Temperature
Fast Switching
Ease of Paralleling
Lead-Free D VDSS = 55V
RDS(on) = 0.040Ω G ID = 29A S Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial …