Datasheet ON Semiconductor 1SS351-TB-E — Даташит

Ordering number : EN3240C 1SS351
Schottky Barrier Diode http://onsemi.com Dual Series Schottky Barrier Diode for Mixer and Detector
5V, 30mA, 0.69pF, CP
Features Series connection of 2 elements in a small-sized package facilitates high-density mounting and
permits 1SS351-applied equipment to be made smaller
Small interterminal capacitance (C=0.69pF typ)
Small forward voltage (VF=0.23V max) Specifications
Absolute Maximum Ratings at Ta=25В°C
Parameter Symbol Peak Reverse Voltage
Forward Current VRM
IF Junction Temperature Tj Storage Temperature Tstg Conditions Ratings Unit
5 V 30 mA 125 В°C -55 to +125 В°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ)
7013A-003 Package
: CP JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB Minimum Packing Quantity : 3,000 pcs./reel
0.1 1SS351-TB-E Packing Type: TB 0.4 1.1 0.95 CH TB 2 0.05 0.5 1 1 : Anode
2 : Cathode
3 : Anode / Cathode
CP 0.3 Marking LOT No. 1.5 3 LOT No. 2.5 0.5 2.9 Electrical Connection
3 1 Semiconductor Components Industries, LLC, 2013
September, 2013 2 72512 TKIM/33098HA (KT)/53196GI (KOTO)/D149MO, TS 8-6255 No.3240-1/6 1SS351
Electrical Characteristics at Ta=25В°C …