Datasheet Vishay SI8802DB-T2-E1 — Даташит

Si8802DB
www.vishay.com Vishay Siliconix N-Channel 8 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
RDS(on) (О©) ID (A) a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 Small 0.8 mm x 0.8 mm outline area Low 0.4 mm max. profile 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1 Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912 S
2 APPLICATIONS MICRO FOOTВ® 0.8 x 0.8
S
3 xxx
xx Low On-resistance 4.3 nC D Load switch with low voltage drop Load switch for 1.2 V, 1.5 V, 1.8 V
power lines 8
0.
m
m 1 TrenchFETВ® power MOSFET Qg (TYP.) 0.8 mm Backside View Smart phones, tablet PCs, portable
media players 1
G 4
D
Bump Side View G S
N-Channel MOSFET Marking Code: xx = AB
xxx = Date/Lot traceability code
Ordering Information:
Si8802DB-T2-E1 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 В°C, unless otherwise noted)
PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 8 Gate-Source Voltage VGS В±5 TA = 70 В°C 2.8 a ID TA = 25 В°C 3b …