Datasheet Vishay SI8466EDB-T2-E1 — Даташит

Si8466EDB
www.vishay.com Vishay Siliconix N-Channel 8 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) 8 RDS(on) (О©) MAX. ID (A) a, e 0.043 at VGS = 4.5 V 5.4 0.046 at VGS = 2.5 V 5.2 0.060 at VGS = 1.5 V 4.6 0.090 at VGS = 1.2 V 3.0 MICRO FOOTВ® 1 x
xxx xx
x Qg (TYP.) m
m m
1m
Backside View
1 Typical ESD protection 3000 V HBM Ultra-Small 1 mm x 1 mm maximum outline 6.8 nC Ultra-thin 0.548 mm maximum height Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912 1x1
S
3 TrenchFETВ® power MOSFET S
2 APPLICATIONS D Low on-resistance load switch
for portable devices 1
G
4
D
Bump Side View -Low power consumption,
low voltage drop G -Increased battery life Marking Code: xxxx = 8466
xxx = Date / lot traceability code -Space savings on PCB Ordering Information:
Si8466DB-T2-E1 (lead (Pb)-free and halogen-free) N-Channel MOSFET …