Datasheet Fairchild BSS123 — Даташит

September 1996 BSS100 / BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance. This product is particularly suited to low
voltage, low current applications, such as small servo
motor controls, power MOSFET gate drivers, and other
switching applications. BSS100: 0.22A, 100V. RDS(ON) = 6Ω @ VGS = 10V.
BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V
High density cell design for extremely low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable. _______________________________________________________________________________ D G
BSS100 BSS123 Absolute Maximum Ratings
Symbol Parameter S TA = 25°C unless otherwise noted BSS100 BSS123 Units VDSS Drain-Source Voltage 100 V VDGR Drain-Gate Voltage (RGS < 20KΩ) 100 V VGSS Gate-Source Voltage -Continuous ± 14 V -Non Repetitive (TP < 50 µS) ± 20 ID Drain Current -Continuous
-Pulsed 0.22 0.17 0.9 0.68 0.63 0.36 A PD Total Power Dissipation @ TA = 25°C W TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C TL Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds 300 °C THERMAL CHARACTERISTICS RθJA Thermal Resistacne, Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 200 350 °C/W BSS100 Rev. F1 / BSS123 Rev. F1 Electrical Characteristics (T
Symbol A = 25°C unless otherwise noted) Parameter Conditions Type Min 100 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA All IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V BSS100 15 µA VDS = 100 V, VGS = 0 V BSS123 1 µA VDS = 100 V, VGS = 0 V IGSSF Gate -Body Leakage, Forward o TJ=125 C V All 60 µA VDS = 60 V, VGS = 0 V BSS100 10 nA VDS = 20 V, VGS = 0 V BSS123 10 nA VGS = 20 V, VDS = 0 V BSS100 10 nA VGS = 20 V, VDS = 0 V BSS123 50 nA All 1.4 2 V Ω ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.22 A BSS100 2.8 6 VGS = 10 V, ID = 0.17 A BSS123 2.8 6 VGS = 4.5 V, ID = 0.22 A BSS100 3.2 10 VGS = 4.5 V, ID = 0.17 A BSS123 3.2 10 VDS = 10 V, ID = 0.22 A BSS100 0.08 0.4 VDS = 10 V, ID = 0.17 A BSS123 0.08 0.4 VDS = 25 V, VGS = 0 V,
f = 1.0 MHz All 29 60 pF All 10 15 pF All 2 6 pF 8 ns gFS Forward Transconductance 0.8 S DYNAMIC CHARACTERISTICS Ciss In …