Datasheet Linear Technology LTC1156CN#PBF — Даташит

Производитель	Linear Technology
Серия	LTC1156
Модель	LTC1156CN#PBF

Quad High Side Micropower MOSFET Driver with Internal Charge Pump

Datasheets

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PDF, 214 Кб, Файл закачен: 26 окт 2017

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Цены

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Электромеханические реле Hongfa – надежность и качество 19 января 2023

Корпус / Упаковка / Маркировка

Корпус	N-16
Код корпуса	N
Индекс корпуса	05-08-1510 (N16)

Параметры

Design Tools	LTspice Model
Экспортный контроль	нет
Function	Quad High Side Driver
Рабочий диапазон температур	от 0 до 70 °C
Switches	4
Vin Max	22 В
Vin Range	4.5 to 18

Экологический статус

RoHS

Совместим

Application Notes

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Micropower High Side MOSFET Drivers &mdash AN53
PDF, 226 Кб, Файл опубликован: 3 янв 1993
This application note describes the operation of high-side Nchannel MOSFET switch drivers designed specifically for operation in battery-powered equipment, such as notebook and palmtop computers and portable medical instruments. A selection guide simplifies the proper choice of MOSFET and driver for a particular high-side switch application. Circuits to drive and protect load impedances ranging from large inductors to large capacitors are described and a section on surface mount and copper clad shunts is included.
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Application Note 53
January 1993
Micropower High Side MOSFET Drivers
Tim Skovmand
Portable electronic equipment, such as notebook and
palmtop computers, portable medical instruments and
battery powered tools, are increasingly dependent upon
efficient power management to meet the challenge of
extracting more useful energy (time) from less battery
volume and weight.
One link in the power management chain which has
received increasing scrutiny, as power supply efficiencies
soar above 90%, is the logic controlled power switch.
Large sections of a typical notebook computer system, for
example, are powered via topside or вЂњhigh sideвЂќ MOSFET
switches. These switches can become significant sources
of power loss if not properly designed.
At first glance, P-channel MOSFETs appear to be the
natural choice for high side switching. Unfortunately, the
RDS(ON) exhibited by most P-channels is prohibitively
high. (Mother Nature has decreed that electron mobility
shall exceed hole mobility in silicon by about 2.5 times, so
that a P-channel MOSFET with the same RDS(ON) and …

Модельный ряд

Серия: LTC1156 (3)

LTC1156CN#PBF LTC1156CSW#PBF LTC1156CSW#TRPBF

Классификация производителя

Monitor, Control and Protection > High Side Switches & MOSFET Drivers

Варианты написания:

LTC1156CNPBF, LTC1156CN PBF