Datasheet Linear Technology LTC1255CN8#PBF — Даташит

Datasheets

Купить LTC1255CN8#PBF на РадиоЛоцман.Цены — от 106 до 1 270 ₽ 34 предложений от 17 поставщиков Интегральные микросхемы Силовые чипы — драйверы затворов
Рутоника Россия и страны СНГ	LTC1255CN8#PBF Analog Devices	313 ₽	Купить
Зенер Россия и страны ТС	LTC1255CN8#PBF Analog Devices	от 444 ₽	Купить
Lixinc Electronics Весь мир	LTC1255CN8#PBF	563 ₽	Купить
ЭлектроПласт- Екатеринбург Россия	LTC1255CN8 Linear Technology	по запросу	Купить

Корпус / Упаковка / Маркировка

Параметры

Экологический статус

Application Notes

• Скачать
  Micropower High Side MOSFET Drivers &mdash AN53
  PDF, 226 Кб, Файл опубликован: 3 янв 1993
  This application note describes the operation of high-side Nchannel MOSFET switch drivers designed specifically for operation in battery-powered equipment, such as notebook and palmtop computers and portable medical instruments. A selection guide simplifies the proper choice of MOSFET and driver for a particular high-side switch application. Circuits to drive and protect load impedances ranging from large inductors to large capacitors are described and a section on surface mount and copper clad shunts is included.
  Выписка из документа

  Application Note 53
  January 1993
  Micropower High Side MOSFET Drivers
  Tim Skovmand
  Portable electronic equipment, such as notebook and
  palmtop computers, portable medical instruments and
  battery powered tools, are increasingly dependent upon
  efficient power management to meet the challenge of
  extracting more useful energy (time) from less battery
  volume and weight.
  One link in the power management chain which has
  received increasing scrutiny, as power supply efficiencies
  soar above 90%, is the logic controlled power switch.
  Large sections of a typical notebook computer system, for
  example, are powered via topside or “high side” MOSFET
  switches. These switches can become significant sources
  of power loss if not properly designed.
  At first glance, P-channel MOSFETs appear to be the
  natural choice for high side switching. Unfortunately, the
  RDS(ON) exhibited by most P-channels is prohibitively
  high. (Mother Nature has decreed that electron mobility
  shall exceed hole mobility in silicon by about 2.5 times, so
  that a P-channel MOSFET with the same RDS(ON) and …

Модельный ряд

Классификация производителя

• Monitor, Control and Protection > High Side Switches & MOSFET Drivers

Варианты написания:

LTC1255CN8PBF, LTC1255CN8 PBF