Datasheet Toshiba TK4R4P06PL — Даташит

TK4R4P06PL
MOSFETs Silicon N-channel MOS (U-MOSоЂґ-H) TK4R4P06PL
1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features
(1) High-speed switching (2) Small gate charge: QSW = 15.1 nC (typ.) (3) Small output charge: Qoss = 39 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate
2: Drain (heatsink)
3: Source DPAK Start of commercial production В©2017 Toshiba Corporation 1 2017-04
2017-05-10
Rev.2.0 TK4R4P06PL
4. Absolute Maximum Ratings (Note) (Ta = 25 оЂЊ unless otherwise specified)
Characteristics Symbol Rating Unit
V Drain-source voltage VDSS 60 Gate-source voltage VGSS В±20 Drain current (DC) (Tc = 25 оЂЊ) (Note 1) ID 58 Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 106 A Drain current (pulsed) (t = 100 Вµs) (Note 1) IDP 330 Power dissipation (Tc = 25 оЂЊ) PD 87 W Single-pulse avalanche energy (Note 3) EAS 42 mJ Single-pulse avalanche current (Note 3) IAS 58 A Channel temperature Tch 175 оЂЊ Storage temperature Tstg -55 to 175 оЂЊ Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). 5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance (Tc = 25 оЂЊ) Symbol Max Unit Rth(ch-c) 1.72 оЂЊ/W Note 1: Ensure that the channel temperature does not exceed 175 оЂЊ.
Note 2: Limited 58 A by package capability
Note 3: VDD = 48 V, Tch = 25 оЂЊ (initial), L = 10.2 ВµH, IAS = 58 A Note: This transistor is sensitive to electrostatic discharge and should be handled with care. В©2017 Toshiba Corporation 2 2017-05-10
Rev.2.0 TK4R4P06PL
6. Electrical Characteristics …