Datasheet Microchip TN0104N3-G — Даташит

Supertex inc. TN0104 N-Channel Enhancement-Mode
Vertical DMOS FET
Features
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в–єв–є General Description Low threshold (1.6V max.)
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination produces
a device with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown. Applications …