Datasheet Microchip TN0606N3-G — Даташит

Supertex inc. TN0606 N-Channel Enhancement-Mode
Vertical DMOS FET
General Description Features
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown. Low threshold -2.0V max.
High input impedance
Low input capacitance -100pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown …