Datasheet Microchip TN5335K1-G — Даташит

Supertex inc. TN5335 N-Channel Enhancement-Mode
Vertical DMOS FET
Features
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є General Description Low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N-and P-channel devices This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices. …