Datasheet Microchip VN2110K1-G — Даташит

Supertex inc. VN2110 N-Channel Enhancement-Mode
Vertical DMOS FET
Features General Description в–єв–є Free from secondary breakdown
в–єв–є Low power drive requirement
в–єв–є Ease of paralleling
в–єв–є Low CISS and fast switching speeds
в–єв–є High input impedance and high gain Applications в–єв–є Motor controls
в–єв–є Converters
в–єв–є Amplifiers
в–єв–є Switches
в–єв–є Power supply circuits
►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired. Product Summary Part Number Package Option Packing VN2110K1-G TO-236AB (SOT-23) 3000/Reel -G denotes a lead (Pb)-free / RoHS compliant package.
Contact factoryВ for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage RDS(ON) BVDSS/BVDGS (max) 100V 4.0О© Pin Configuration Absolute Maximum Ratings DRAIN SOURCE В±20V Operating and storage temperature -55 C to +150OC
O Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground. Typical Thermal Resistance
Package Оёja TO-236AB (SOT-23) 203OC/W Doc.# DSFP-VN2110 …