Datasheet Microchip VN3205N3-G-P002 — Даташит

Supertex inc. VN3205 N-Channel Enhancement-Mode
Vertical DMOS FETs Features General Description в–єв–є Free from secondary breakdown
в–єв–є Low power drive requirement
в–єв–є Ease of paralleling
в–єв–є Low CISS and fast switching speeds
в–єв–є Excellent thermal stability
в–єв–є Integral source-drain diode
в–єв–є High input impedance and high gain Applications в–єв–є Motor controls
в–єв–є Converters
в–єв–є Amplifiers
в–єв–є Switches
в–єв–є Power supply circuits
в–єв–є Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information
Part Number This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a …