Datasheet Microchip LP0701N3-G — Даташит

Supertex inc. LP0701 P-Channel Enhancement-Mode
Lateral MOSFET
Features General Description в–єв–є Ultra-low threshold
в–єв–є High input impedance
в–єв–є Low input capacitance
в–єв–є Fast switching speeds
в–єв–є Low on-resistance
в–єв–є Freedom from secondary breakdown
в–єв–є Low input and output leakage These enhancement-mode (normally-off) transistors utilize
a lateral MOS structure and Supertex’s well-proven silicongate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar
transistors and with the high input impedance and negative
temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free
from thermal runaway and thermally induced secondary
breakdown. The low threshold voltage and low on-resistance
characteristics are ideally suited for hand held, battery
operated applications. Applications в–єв–є Logic level interfaces
в–єв–є Solid state relays
в–єв–є Battery operated systems
в–єв–є Photo voltaic drives
в–єв–є Analog switches
в–єв–є General purpose line drivers Ordering Information Product Summary Part Number Package Options Packing LP0701LG-G 8-Lead SOIC 2500/Reel LP0701N3-G TO-92 1000/Bag LP0701N3-G P002 TO-92 2000/Reel LP0701N3-G P003 TO-92 2000/Reel LP0701N3-G P005 TO-92 2000/Reel LP0701N3-G P013 TO-92 2000/Reel LP0701N3-G P014 TO-92 RDS(ON) VGS(TH) ID(ON) -16.5V 3.0kО© -1.0V (max) 3.0mA (min) Pin Configuration …