Datasheet Microchip TP2104N3-G-P003 — Даташит

Supertex inc. TP2104 P-Channel Enhancement-Mode
Vertical DMOS FET
Features
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в–єв–є General Description High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
Free from secondary breakdown This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s wellproven, silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown. Applications
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