Datasheet Microchip TP5335K1-G — Даташит

Supertex inc. TP5335 P-Channel Enhancement-Mode
Vertical DMOS FET
Features
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в–єв–є General Description High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
Free from secondary breakdown The Supertex TP5335 is a low threshold enhancementmode (normally-off) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown. Applications …