Datasheet Microchip MCP87022T-U/MF — Даташит

MCP87022
High-Speed N-Channel Power MOSFET
Features: Description Low Drain-to-Source On Resistance (RDS(ON) Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD) Low Series Gate Resistance (RG) Fast Switching Capable of Short Dead-Time Operation ROHS Compliant The MCP87022 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87022 to achieve a low QG for a given RDS(on)
value, resulting in a low Figure of Merit (FOM).
Combined with low RG, the low Figure of Merit of the
MCP87022 allows high efficiency power conversion
with reduced switching and conduction losses. Applications Point-of-Load DC-DC Converters High Efficiency Power Management in Servers,
Networking and Automotive Applications Package Type
PDFN 5 x 6
S 1 8 D S 2 7 D S 3 6 D G 4 5 D Product Summary Table: Unless otherwise indicated, TA = +25ЛљC
Parameters Sym Min Typ Max Units Conditions Drain-to-Source Breakdown Voltage BVDSS 25 — — V VGS = 0V, ID = 250 µA Gate-to-Source Threshold Voltage VGS(TH) 1 1.3 1.6 V VDS = VGS, ID = 250 µA Drain-to-Source On Resistance RDS(ON) — 2.2 2.6 mΩ VGS = 4.5V, ID = 25A — 1.9 2.3 mΩ VGS = 10V, ID = 25A Operating Characteristics Total Gate Charge QG — 25.5 29 nC VDS = 12.5V, ID = 25A, VGS = 4.5V Gate-to-Drain Charge QGD — 9 — nC VDS = 12.5V, ID = 25A RG — 1.3 — Ω — Thermal Resistance Junction-to-X RθJX — — 56 ˚C/W Note 1 Thermal Resistance Junction-to-Case RθJC — — 1.6 ˚C/W Note 2 Series Gate Resistance
Thermal Characteristics Note 1: 2: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
RОёJC is determined using JEDEC 51-14 Method. This characteristic is determined by design. пѓЈ 2012 Microchip Technology Inc. DS25133B-page 1 MCP87022
1.0 † Notice:
Stresses above those listed under
“Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions …