Datasheet Microchip MCP87030T-U/MF — Даташит

MCP87030
High-Speed N-Channel Power MOSFET
Features: Description: Low Drain-to-Source On Resistance (RDS(ON) Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD) Low Series Gate Resistance (RG) Fast Switching Capable of Short Dead-Time Operation RoHS Compliant The MCP87030 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87030 to achieve a low QG for a given RDS(on)
value, resulting in a low Figure of Merit (FOM).
Combined with low RG, the low FOM of the MCP87030
allows high efficiency power conversion with reduced
switching and conduction losses. Applications: Point-of-Load DC-DC Converters High-Efficiency Power Management in Servers,
Networking and Automotive Applications Package Type
PDFN 5 x 6 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Product Summary Table: Unless otherwise indicated, TA = +25В°C
Parameters Sym. Min. Typ. Max. Units Conditions Drain-to-Source Breakdown Voltage BVDSS 25 — — V VGS = 0V, ID = 250 µA Gate-to-Source Threshold Voltage VGS(TH) 1 1.3 1.6 V VDS = VGS, ID = 250 µA Drain-to-Source On Resistance RDS(ON) — 3.3 4 mΩ VGS = 4.5V, ID = 20A — 2.8 3.5 mΩ VGS = 10V, ID = 20A Operating Characteristics Total Gate Charge QG — 17 22 nC VDS = 12.5V, ID = 20A, VGS = 4.5V Gate-to-Drain Charge QGD — 6.7 — nC VDS = 12.5V, ID = 20A RG — 1.2 — Ω — Thermal Resistance Junction-to-X RθJX — — 55 °C/W Note 1 Thermal Resistance Junction-to-Case RθJC — — 1.2 °C/W Note 2 Series Gate Resistance
Thermal Characteristics Note 1:
2: RОёJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
RОёJC is determined using JEDEC 51-14 Method. This characteristic is determined by design. пѓЈ 2013 Microchip Technology Inc. DS200002328B-page 3 MCP87030
1.0 † Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this …