Datasheet Intersil HM1-6551B/883 — Даташит

DATASHEET
HM-6551/883 FN2988
Rev.2.00
July 2003 256 x 4 CMOS RAM
The HM-6551/883 is a 256 x 4 static CMOS RAM fabricated
using self-aligned silicon gate technology. Synchronous
circuit design techniques are employed to achieve high
performance and low power operation. On chip latches are
provided for address and data outputs allowing efficient
interfacing with microprocessor systems. The data output
buffers can be forced to a high impedance state for use in
expanded memory arrays.
The HM-6551/883 is a fully static RAM and may be
maintained in any state for an indefinite period of time. Data
retention supply voltage and supply current are guaranteed
over temperature. PACKAGE
CERDIP -55В°C to
+125В°C This Circuit is Processed in Accordance to MIL-STD-883
and is Fully Conformant Under the Provisions of
Paragraph 1.2.1. Low Power Standby . 50пЃ­W Max Low Power Operation . .20mW/MHz Max Fast Access Time . 220ns Max Data Retention . at 2.0V Min TTL Compatible Input/Output High Output Drive -1 TTL Load Internal Latched Chip Select Ordering Information
TEMP.
RANGE Features 220ns 300ns PKG.
DWG. # HM1-6551B/883 HM1-6551/883 F22.4 High Noise Immunity On-Chip Address Register Latched Outputs Three-State Output Pin Descriptions …