» Datasheets » Аналоговые переключатели, мультиплексоры

Datasheet Intersil HS0-302AEH-Q

Производитель	Intersil
Серия	HS-302AEH
Модель	HS0-302AEH-Q

Radiation Hardened BiCMOS Dual DPST Analog Switch

Datasheets

Скачать » Datasheet PDF, 587 Кб, Версия: 2017-12-21
HS-302AEH Datasheet
Выписка из документа ↓
DATASHEET
HS-302AEH FN8815
Rev.1.00
Mar 17, 2017 Radiation Hardened BiCMOS Dual DPST Analog Switch
The HS-302AEH is a dual Double-Pole, Single-Throw (DPST)
analog switch fabricated using IntersilвЂ™s dielectrically isolated
Radiation Hardened Silicon Gate (RSG) process technology to
ensure latch-up free operation. It is pin compatible and
functionally equivalent to the HS-302RH.
This switch offers convenient switching controlled by 5V digital
inputs and low-resistance switching performance for analog
voltages up to the supply rails. ON-resistance is low and stays
reasonably constant over the full range of operating voltage
and current as well as over exposure to radiation.
The HS-302AEH is available in a 14 Ld CDFP or die form and
operates across the extended temperature range of -55В°C to
+125В°C. Applications Features Electrically screened to DLA SMD# 5962-95812 No latch-up, dielectrically isolated device islands Pin and functionally compatible with Intersil HS-302RH
series analog switches Analog signal range equal to the supply voltage range Low leakage 150nA (maximum, post-rad) Low rON 60О© (maximum, post-rad) Low standby supply current В±150ВµA (maximum, post-rad) Radiation assurance
-High dose rate (50 to 300rad(Si)/s) 100krad(Si)
-Low dose rate (0.01rad(Si)/s) . 50krad(Si)* Single event effects
-For LET = 60MeVmg/cm2 at 60В° incident angle, ...

Цены

Параметры

Class	V, /PROTO
DLA SMD	5962-95812
Description	Radiation Hardened BiCMOS Dual DPST Analog Switch
High Dose Rate (HDR) krad(Si)	100
Low Dose Rate (ELDRS) krad(Si)	50
Рабочий диапазон температур	от -55 до 125
Qualification Level	QML V (space)
SEL (MeV/mg/cm2)	SEL free