Datasheet Intersil HS0-303CEH-Q — Даташит

DATASHEET
HS-303CEH FN8399
Rev 3.00
March 4, 2015 Radiation Hardened BiCMOS Dual SPDT Analog Switch
The HS-303CEH is an analog switch and a monolithic device
that is fabricated using Intersil’s dielectrically isolated
Radiation Hardened Silicon Gate (RSG) process technology to
insure latch-up free operation. It is pinout compatible and
functionally equivalent to the HS-303RH. This switch offers
low-resistance switching performance for analog voltages up
to the supply rails. ON-resistance is low and stays reasonably
constant over the full range of operating voltage and current.
ON-resistance also stays reasonably constant when exposed to
radiation. Break-before-make switching is controlled by 5V
digital inputs. The HS-303CEH can operate with rails of В±15V. Specifications
The Detailed Electrical Specifications for the HS-303CEH is
contained in SMD 5962-95813. Features QML, per MIL-PRF-38535 No latch-up, dielectrically isolated device islands Pinout and functionally compatible with Intersil HS-303RH
series analog switches Analog signal range equal to the supply voltage range Low leakage . 150nA (max, post-rad) Low rON . 60О© (max, post-rad) Low standby supply current . В±150ВµA (max, post-rad) Radiation assurance
-High dose rate (50 to 300rad(Si)/s) 100krad(Si)
-Low dose rate (0.01rad(Si)/s) . 50krad(Si)* Single event effects
-For LET = 60MeV-mg/cm2 at 60В° incident angle, …