Datasheet Intersil HCS05MS — Даташит

DATASHEET
HCS05MS FN3557
Rev 1.00
September 1995 Radiation Hardened Hex Inverter with Open Drain Features Pinouts 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14, LEAD FINISH C
TOP VIEW Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ) A1 1 14 VCC Y1 2 13 A6 A2 3 12 Y6 Y2 4 11 A5 Latch-Up Free Under Any Conditions A3 5 10 Y5 Military Temperature Range: -55oC to +125oC Y3 6 9 A4 GND 7 8 Y4 Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose Rate Upset >10 10 RAD (Si)/s 20ns Pulse Significant Power Reduction Compared to LSTTL ICs DC Operating Voltage Range: 4.5V to 5.5V Input Logic Levels
-VIL = 30% of VCC Max
-VIH = 70% of VCC Min 14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14, LEAD FINISH C
TOP VIEW Input Current Levels Ii п‚Ј 5пЃ­A at VOL, VOH Description
The Intersil HCS05MS is a Radiation Hardened Hex inverter
function with open drain outputs. These open drain outputs
can drive into resistive loads with a separate voltage supply.
The HCS05MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS05MS is supplied in a 14 lead Ceramic Flatpack (K
suffix) or a Ceramic Dual-In-Line Package (D suffix). A1 1 14 VCC Y1 2 13 A6 A2 3 12 Y6 Y2 4 11 A5 A3 5 10 Y5 Y3 6 9 A4 GND 7 8 Y4 Functional Diagram
Yn
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