Datasheet Intersil HS9-4424EH-Q

Производитель	Intersil
Серия	HS-4424EH
Модель	HS9-4424EH-Q

Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers

Datasheets

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HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH Datasheet
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DATASHEET
HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH FN4739
Rev 2.00
September 24, 2013 Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
The Radiation Hardened HS-4424RH, HS-4424EH,
HS-4424BRH and HS-4424BEH are non-inverting, dual,
monolithic high-speed MOSFET drivers designed to convert TTL
level signals into high current outputs at voltages up to 18V. Features The inputs of these devices are TTL compatible and can be
directly driven by our HS-1825ARH PWM device or by our
ACS/ACTS and HCS/HCTS type logic devices. The fast rise
times and high current outputs allow very quick control of high
gate capacitance power MOSFETs in high frequency
applications. EH version acceptance tested to 50krad(Si) (LDR) The high current outputs minimize power losses in MOSFETs by
rapidly charging and discharging the gate capacitance. The
output stage incorporates a low voltage lock-out circuit that
puts the outputs into a three-state mode when the supply
voltage drops below 10V for the HS-4424RH, HS-4424EH and
7.5V for the HS-4424BRH, HS-4424BEH. IPEAK >2A (min) Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) BiCMOS process, these devices are immune
to Single Event Latch-up and have been specifically designed
to provide highly reliable performance in harsh radiation
environments.
Specifications for Rad Hard QML devices are controlled by the ...

Цены

Корпус / Упаковка / Маркировка

Корпус	16 Ld CFP
Индекс корпуса	K16.A

Параметры

Class	V
DLA SMD	5962-99560
Description	Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
High Dose Rate (HDR) krad(Si)	300
Low Dose Rate (ELDRS) krad(Si)	50
Рабочий диапазон температур	от -55 до 125
Qualification Level	QML Class V (space)
SEL (MeV/mg/cm2)	SEL free