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Datasheet Intersil HS9-4424EH-Q

Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers

Datasheets

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  HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH Datasheet
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  DATASHEET
  HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH FN4739
  Rev 2.00
  September 24, 2013 Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
  The Radiation Hardened HS-4424RH, HS-4424EH,
  HS-4424BRH and HS-4424BEH are non-inverting, dual,
  monolithic high-speed MOSFET drivers designed to convert TTL
  level signals into high current outputs at voltages up to 18V. Features The inputs of these devices are TTL compatible and can be
  directly driven by our HS-1825ARH PWM device or by our
  ACS/ACTS and HCS/HCTS type logic devices. The fast rise
  times and high current outputs allow very quick control of high
  gate capacitance power MOSFETs in high frequency
  applications. EH version acceptance tested to 50krad(Si) (LDR) The high current outputs minimize power losses in MOSFETs by
  rapidly charging and discharging the gate capacitance. The
  output stage incorporates a low voltage lock-out circuit that
  puts the outputs into a three-state mode when the supply
  voltage drops below 10V for the HS-4424RH, HS-4424EH and
  7.5V for the HS-4424BRH, HS-4424BEH. IPEAK >2A (min) Constructed with the Intersil dielectrically isolated Rad Hard
  Silicon Gate (RSG) BiCMOS process, these devices are immune
  to Single Event Latch-up and have been specifically designed
  to provide highly reliable performance in harsh radiation
  environments.
  Specifications for Rad Hard QML devices are controlled by the ...

Цены

Корпус / Упаковка / Маркировка

Параметры

Экологический статус

Другие варианты исполнения

HS-4424BEH HS-4424BRH HS-4424RH

Модельный ряд

• HS0-4424EH-Q HS9-4424EH-Q

Классификация производителя

• Space & Harsh Environment > Rad Hard Power > RH MOSFET Drivers

Варианты написания:

HS94424EHQ, HS9 4424EH Q

На английском языке: Datasheet Intersil HS9-4424EH-Q

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