Datasheet Vishay Si1012R-T1-GE3 — Даташит

Si1012R, Si1012X
Vishay Siliconix N-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY
VDS (V) 20 RDS(on) (пЃ—) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 SC-75A or SC-89
G 1 APPLICATIONS
3 S TrenchFETВ® Power MOSFET: 1.8 V Rated
Gate-Source ESD Protected: 2000 V
High-Side Switching
Low On-Resistance: 0.7 пЃ—
Low Threshold: 0.8 V (typ.)
Fast Switching Speed: 10 ns
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912 Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers D 2
Top View BENEFITS
ORDERING INFORMATION
Marking
Code Part Number Package Si1012R-T1-GE3 (Lead (Pb)-free
and Halogen-free) SC-75A
(SOT-416) C Si1012X-T1-GE3 (Lead (Pb)-free
and Halogen-free) SC-89
(SOT-490) A Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation …