Si4464DY
Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
VDS (V) RDS(on) (О©) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 Halogen-free According to IEC 61249-2-21
Definition TrenchFETВ® Power MOSFET PWM Optimized for Low Qg and Low Rg Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch
D SO-8
S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View
S
Ordering Information: Si4464DY-T1-E3 (Lead (Pb)-free)
Si4464DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 В°C, unless otherwise noted
Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 200 Gate-Source Voltage VGS В± 20 Continuous Drain Current (TJ = 150 В°C)a TA = 25 В°C
TA = 70 В°C Single Avalanch Current L = 0.1 mH Single Avalanch Energy
Conduction)a 2.2 1.7
1.3 Maximum Power Dissipationa TA = 25 В°C
TA = 70 В°C 8 IAS 3 EAS 0.45 IS
PD A mJ 2.1 1.2 2.5 1.5 1.6 0.9 TJ, Tstg Operating Junction and Storage Temperature Range V 1.7 IDM Pulsed Drain Current Continuous Source Current (Diode ID Unit -55 to 150 A
W
В°C THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Symbol
t ≤ 10 s
Steady State
Steady State RthJA …
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