Datasheet Central Semiconductor CMDSH-4E TR — Даташит

CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMDSH-4E is an
enhanced version of the CMDSH-3 silicon Schottky
diode in an SOD-323 surface mount package.
ENHANCED SPECIFICATIONS:
♦ IO from 100mA MAX to 200mA MAX
♦ BVR from 30V MIN to 40V MIN
♦ VF from 1.0V MAX to 0.8V MAX SOD-323 CASE MAXIMUM RATINGS: (TA=25°C) MARKING CODE: S1E SYMBOL ♦ Peak Repetitive Reverse Voltage
♦ Average Forward Current VRRM
IO Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance UNITS
40 V 200 mA IFRM
IFSM 350 mA 750 mA PD
TJ, Tstg 250 mW -65 to +150 В°C О?JA 500 В°C/W ELECTRICAL
SYMBOL
IR CHARACTERISTICS: (TA=25В°C unless otherwise noted)
TEST CONDITIONS …