EPC2112 – 200 V, 10 A Integrated Gate Driver eGaN® IC Preliminary Datasheet
FEATURES: Integrated Gate Driver
– Low Propagation Delay
– Up to 7 MHz Operation EPC2112 devices are supplied only in
passivated die form with solder balls – Operates from 5 V Supply 200 V, 40-mΩ eGaN FET Low Inductance 2.9 mm x 1.1 mm BGA Die Size: 2.9 mm x 1.1 mm Schematic Diagram APPLICATIONS: Wireless Power (Highly Resonant and Inductive) High Frequency DC-DC Conversion DESCRIPTION
The EPC2112 enhancement-mode gallium-nitride (eGaNВ®) integrated driver and FET consists of a 40-mО©,
200 V eGaN power transistor and an optimized gate driver in a low inductance 2.9 mm by 1.1 mm surfacemount BGA.
The EPC2112 monolithic IC enables designers to improve efficiency, save space, and lower costs compared to
silicon-based solutions. The ultra-low capacitance and zero reverse recovery of the eGaN FET enables efficient
operation in many topologies. The integrated driver is specifically matched to the GaN device to yield optimal
performance under various operating conditions. Performance further enhanced due to the small, low
inductance footprint. Monolithic integration eliminates interconnect inductances for higher efficiency at high
frequency. This is especially important for high frequency applications such as resonant wireless power. Subject to Change without Notice www.epc-co.com COPYRIGHT 2018 Page 1 EPC2112 – 200 V, 10 A Integrated Gate Driver eGaN® IC
ABSOLUTE MAXIMUM RATINGS
Maximum Ratings
V Drain-to-Source Voltage (Continuous) 200 Continuous (TA = 25ЛљC, RОёJA= 18 ЛљC/W) 10 Pulsed (25ЛљC, TPULSE 300 Вµs) 40 VIN Input Signal Voltage 6 TJ Operating Temperature -40 to 150 TSTG Storage Temperature -40 to 150 VCC Supply Voltage VDS
ID A
V
ЛљC
V 6 RECOMMENDED OPERATING CONDITIONS
Recommended Operating Conditions
PARAMETER 1 Description MIN TYP MAX UNIT 160 V 5.5 V VDS Drain-Source voltage VCC Driver Supply voltage ICC External driver supply current1 50 mA VIN,Off Input signal for turn-off 0.5 V VIN,On Input signal for turn-on 4.5 V VIN,slew Input signal slew rate 0.25 V/ns TJ Operating Temperature -40 4.5 5 150 В°C For up to maximum operating frequency THERMAL INFORMATION
Thermal Characteristics 2 TYP Unit RОёJC Thermal Resistance, Junction to Case 1.7 ЛљC/W RОёJB Thermal Resistance, Junction to Board 20 ЛљC/W RОёJA Thermal Resistance, Junction to Ambient2 66 ЛљC/W RОёJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. Thermal models for EPC devices available at http://epc-co.com/epc/DesignSupport/DeviceMode …
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